Wafer-Based Plasma Sensing System
Technical Features
Wafer-based design with built-in sensors enables real-time measurement of plasma characteristics, helping to improve process stability and yield.
Technical Description
The wafer-based plasma sensing system utilizes a sensor wafer that matches the size and material of a 12-inch process wafer, ensuring high compatibility and allowing it to enter the process chamber without affecting existing equipment operations. Equipped with built-in multi-point sensors, the system can perform real-time measurements of key plasma parameters such as plasma potential, floating potential, and plasma density during plasma processes.
Compared to traditional diagnostic systems that rely on intrusive, single-point measurements from outside the chamber, this system rapidly collects data from multiple points across the sensor wafer, providing accurate and representative measurements under actual process conditions. It enables comprehensive monitoring of plasma behavior across different locations in the chamber, which significantly aids in process optimization, fault diagnosis, and equipment maintenance. This technology is particularly suited for advanced semiconductor processes such as plasma etching and thin-film deposition, offering substantial improvements in process control precision, stability, and final product yield. Additionally, it helps shorten process development cycles and reduce manufacturing costs.
Contact
Name:林冠宇 / 陳義昌
Phone:03-5918664 / 03-5743707
E-mail:guanyulin@itri.org.tw / yicchen@itri.org.tw
