Technical Description

Conventional GaN power devices typically adopt lateral heteroepitaxial structures, such as GaN HEMTs. While these devices provide advantages including high-frequency operation and low on-resistance, the high defect density inherent to heteroepitaxial layers limits their reliability and constrains breakdown voltages to below 650V. Additionally, the lateral structure poses challenges for device scaling and integration, making it less suitable for high-voltage, high-current, and high-power-density applications. By contrast, GaN UMOSFETs are based on a vertical structure using homoepitaxial layers, offering high breakdown voltage, enhanced reliability, and superior thermal performance. This vertical architecture enables a smaller chip footprint, higher power density, and improved system integration. As a result, GaN UMOSFETs are well-suited for applications exceeding 650V, such as electric vehicle drive systems, industrial-grade power conversion, and data center power supplies-scenarios that demand exceptional efficiency, reliability, and power density. This technology represents a key achievement of the first phase of the “Taiwan–UK Bilateral Program: Advanced GaN Device Technology Development,” demonstrating the advanced R&D capabilities fostered through international collaboration in the field of wide bandgap semiconductor packaging.

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