Technical Description

To enhance the electrical performance, thermal management efficiency, and long-term reliability of high-voltage Gallium Nitride (GaN) power devices after packaging, this technology emphasizes detailed thermal stress simulation throughout the packaging process. A predictive model is established to assess the thermomechanical compatibility of packaging materials, forming the basis for design optimization. By evaluating the feasibility of the packaging architecture-integrating key parameters such as stress distribution, thermal conductivity, and electrical characteristics-quantitative data is generated to support prototype fabrication. The process is subsequently validated through the implementation of a flip-chip packaging structure.
This achievement represents a key milestone in the first phase of the “Taiwan–UK Bilateral Program: Advanced GaN Device Technology Development,” highlighting the advanced research and development capabilities enabled by international collaboration in the field of wide bandgap semiconductor packaging.

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