Technical Description

Gallium Nitride (GaN), as a wide bandgap semiconductor, offers excellent performance and stability under high-frequency operation. Its inherent advantages, including fast switching speed, compact form factor, and efficient thermal dissipation-make it significantly closer to an ideal switch compared to conventional silicon-based devices.
This work presents the design of an LLC resonant converter for high-voltage input applications, as well as the development of a dedicated test platform for evaluating GaN power switching devices. By incorporating newly developed GaN devices into the platform, their switching performance and efficiency can be rapidly assessed and compared-significantly streamlining the device development cycle.

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